| PART |
Description |
Maker |
| 350PJT160 350PJT100 350PJT140 350PJT 350PJT120 |
V(rrm/drm): 1000V; 1200A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1600V; 1200A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1200V; 1200A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1400V; 1200A I(tgq) gate turn-off hockey puk SCR
1200A ITGQ Gate Turn-Off Hockey Puk SCRs
|
IRF[International Rectifier]
|
| BTA06-400A BTA06-400S BTA06-400T BTA06-700A BTA06- |
TRIAC|600V V(DRM)|6A I(T)RMS|TO-220
TRIAC|700V V(DRM)|6A I(T)RMS|TO-220 可控硅| 700V的五（DRM）的| 6A条口（T）的有效值|20
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 6A条口T）的有效值|20
|
STMicroelectronics N.V.
|
| SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五（DRM）的| 300口（T）的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五（DRM）的| 150A口（T）的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五（DRM）的| 300口（T）的有效值|培训基金，一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五（DRM）的|0A口（T）的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
|
| CQ202-4M CQ202-4N CQ202-4D CQ202-4B |
TRIAC|200V V(DRM)|4A I(T)RMS|TO-202 可控硅| 200伏五（DRM）的| 4A条口T）的有效值|02
TRIAC|400V V(DRM)|4A I(T)RMS|TO-202
From old datasheet system
4.0 AMP TRIAC 600 THRU 800 VOLTS
Leaded Thyristor TRIAC
|
Unisonic Technologies Co., Ltd.
Central Semiconductor Corp.
|
| 320PJT200A |
THYRISTOR|GTO|2KV V(DRM)|TO-200VAR82W 晶闸管| GTO的| 2kV的五（DRM）的|00VAR82W
|
PanJit International, Inc.
|
| BTB08-200AW |
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
|
LEM
|
| FG1600BX24 FG2000DX24 FG2000DX32 |
THYRISTOR|GTO|1.2KV V(DRM)|TO-200VAR75 晶闸管| GTO的| 1.2KV五（DRM）的|00VAR75
THYRISTOR|GTO|1.2KV V(DRM)|TO-200AE 晶闸管| GTO的| 1.2KV五（DRM）的|00AE
|
Dynex Semiconductor, Ltd.
Fairchild Semiconductor, Corp.
|
| TPDV225 TPDV125 TPDV425 |
TRIAC|200V V(DRM)|25A I(T)RMS|TO-218 可控硅| 200伏五（DRM）的| 25A条口（T）的有效值|18
TRIAC|400V V(DRM)|25A I(T)RMS|TO-218
|
Delta Electronics, Inc.
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| BTA140B500T/R |
TRIAC|500V V(DRM)|25A I(T)RMS|SOT-404 可控硅| 500V五（DRM）的| 25A条口（T）的有效值|采用SOT - 404
|
NXP Semiconductors N.V.
|
| CDL71240 CDL20840 CDL21440 CDL70140 CDL70240 |
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED NEGATIVE DOUBLER|1.2KV V(DRM)|MODULE-S
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED POSITIVE DOUBLER|800V V(DRM)|MODULE-S
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED POSITIVE DOUBLER|1.4KV V(DRM)|MODULE-S
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED NEGATIVE DOUBLER|100V V(DRM)|MODULE-S PHOTOTHYRISTOR |图片半控负倍增| 100V的五（DRM）的|模块
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED NEGATIVE DOUBLER|200V V(DRM)|MODULE-S PHOTOTHYRISTOR |图片半控负倍增| 200伏五（DRM）的|模块
|
Atmel, Corp.
|
